MCG30N10Y-TP
MOSFET N-CH DFN3333Manufacturer: Micro Commercial Co
Categories: Single FETs, MOSFETs
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Micro Commercial Co MCG30N10Y-TP is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 100 V and a continuous Drain current (Id) of 30 A at 25°C. The Rds On is specified at a maximum of 16.5 mOhm at 20 A and 10 Vgs. It offers a low input capacitance of 1211 pF at 50 Vds and a gate charge of 25 nC at 10 Vgs. With a maximum power dissipation of 20.8W, this MOSFET is suitable for surface mount applications, housed in an 8-VDFN Exposed Pad package (DFN3333). It operates across a temperature range of -55°C to 150°C. The technology utilized is Metal Oxide MOSFET. This component is commonly found in power management, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A |
| Rds On (Max) @ Id, Vgs | 16.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20.8W |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DFN3333 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1211 pF @ 50 V |
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