MCG30N03-TP
MOSFET N-CH 30V 30A DFN3030Manufacturer: Micro Commercial Co
Categories: Single FETs, MOSFETs
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Micro Commercial Co MCG30N03-TP is an N-Channel MOSFET designed for high-efficiency power switching applications. This component features a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 30A at 25°C (Tc). With a low on-resistance (Rds On) of 9mOhm at 10A and 10V, it minimizes conduction losses. The device operates with a gate drive voltage range from 4.5V to 10V and has a maximum gate charge (Qg) of 15nC at 10V. Its input capacitance (Ciss) is a maximum of 1490pF at 15V. The MCG30N03-TP is housed in a DFN3030 package, a surface mount configuration enabling compact board designs. Power dissipation is rated at 25W. This MOSFET technology is suitable for various industrial sectors including automotive and consumer electronics. It is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 25W |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | DFN3030 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1490 pF @ 15 V |
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