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MCG18P06YHE3-TP

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MCG18P06YHE3-TP

POWER MOSFET

Manufacturer: Micro Commercial Co

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Micro Commercial Co MCG18P06YHE3-TP is a P-Channel Power MOSFET designed for demanding applications. This surface mount component offers a Drain to Source Voltage (Vdss) of 60 V and a continuous Drain Current (Id) of 18A at 25°C (Tc). The device features a low on-resistance (Rds On) of 45mOhm maximum at 15A and 10V Vgs, and a maximum power dissipation of 42W (Tj). It is qualified to AEC-Q101 standards, making it suitable for automotive and industrial applications. The MCG18P06YHE3-TP utilizes MOSFET technology and is supplied in a PDFN3333 package on tape and reel. Key electrical parameters include a gate charge (Qg) of 14.1 nC maximum at 10V Vgs and input capacitance (Ciss) of 830 pF maximum at 25V Vds. The operating temperature range is -55°C to 150°C (TJ) with a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 2.5V maximum at 250µA.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 30 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Rds On (Max) @ Id, Vgs45mOhm @ 15A, 10V
FET Feature-
Power Dissipation (Max)42W (Tj)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackagePDFN3333
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs14.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds830 pF @ 25 V
QualificationAEC-Q101

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