MCG18P02A-TP
MCG18P02A-TPManufacturer: Micro Commercial Co
Categories: Single FETs, MOSFETs
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Micro Commercial Co MCG18P02A-TP is a P-Channel MOSFET designed for efficient power management applications. This component features a 20V drain-source breakdown voltage (Vdss) and can handle a continuous drain current (Id) of 18A at 25°C, with a maximum power dissipation of 52W. The Rds(On) is specified at a maximum of 8.5mOhm at 4.2A and 4.5V gate-source voltage. Optimized for low-voltage operation, it offers a drive voltage range of 1.8V to 4.5V for achieving its rated on-resistance. The device boasts a low gate charge (Qg) of 29 nC at 10V and an input capacitance (Ciss) of 1255 pF at 10V. Housed in an 8-PowerWDFN package (DFN3030-8) for surface mounting, this MOSFET operates across a wide temperature range of -55°C to 150°C. It is commonly utilized in industrial and automotive power control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 4.2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 52W |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | DFN3030-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1255 pF @ 10 V |
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