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MCG18N06HE3-TP

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MCG18N06HE3-TP

MOSFET

Manufacturer: Micro Commercial Co

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Micro Commercial Co MCG18N06HE3-TP is an N-Channel MOSFET designed for demanding applications. This device features a 60V drain-source breakdown voltage and supports a continuous drain current of 18A at a case temperature. With a low on-resistance of 30mOhm maximum at 15A and 10V Vgs, it minimizes conduction losses. The MOSFET is rated for 19.8W of power dissipation at a junction temperature and operates across a wide temperature range of -55°C to 150°C. Key electrical characteristics include a gate charge of 23nC maximum at 10V Vgs and input capacitance of 1200pF maximum at 25V Vds. It is supplied in a DFN3333 package with an exposed pad for enhanced thermal performance and is qualified to AEC-Q101, making it suitable for automotive applications. The drive voltage range for optimal Rds On is from 4.5V to 10V.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-VDFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Rds On (Max) @ Id, Vgs30mOhm @ 15A, 10V
FET Feature-
Power Dissipation (Max)19.8W (Tj)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageDFN3333
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1200 pF @ 25 V
QualificationAEC-Q101

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