MCG13N02Y-TP
MOSFET N-CH DFN3333Manufacturer: Micro Commercial Co
Categories: Single FETs, MOSFETs
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Micro Commercial Co MCG13N02Y-TP is an N-Channel Power MOSFET designed for demanding applications. This device features a 20V drain-source breakdown voltage and a continuous drain current capability of 13A at 25°C, with a maximum power dissipation of 20.8W. The low on-resistance of 13.5mOhm at 20A and 4.5V Vgs makes it suitable for efficient power switching. The MOSFET utilizes Metal Oxide technology and is housed in an 8-VDFN exposed pad package (DFN3333), suitable for surface mounting. Key parameters include a gate charge of 10 nC (max) at 4.5V Vgs and input capacitance of 673 pF (max) at 10V Vds. It operates across a temperature range of -55°C to 150°C. This component is commonly found in power management, automotive, and industrial control systems. The device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 20A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 20.8W |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | DFN3333 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 673 pF @ 10 V |
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