MCG08P06HE3-TP
InterfaceManufacturer: Micro Commercial Co
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Micro Commercial Co MCG08P06HE3-TP is a P-Channel MOSFET designed for demanding applications. This component features a 60V Drain-to-Source Voltage (Vdss) and supports a continuous drain current (Id) of 8A at 25°C. The Rds On is specified as a maximum of 28.4mOhm at 6A and 10V gate drive. With a maximum power dissipation of 20.8W, it is suitable for surface mount configurations within the 8-VDFN Exposed Pad (DFN3333) package. Key parameters include a gate charge (Qg) of 61nC at 10V and input capacitance (Ciss) of 4304pF at 30V. The device operates over a temperature range of -55°C to 150°C and is AEC-Q101 qualified, making it suitable for automotive and industrial sectors. The gate-source voltage (Vgs) has a maximum rating of ±20V.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 14 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Rds On (Max) @ Id, Vgs | 28.4mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20.8W |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | DFN3333 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4304 pF @ 30 V |
| Qualification | AEC-Q101 |
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