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MCG04N10A-TP

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MCG04N10A-TP

MOSFET N-CH 100V 4A DFN3030-8

Manufacturer: Micro Commercial Co

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Micro Commercial Co MCG04N10A-TP is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 4A at 25°C, with a maximum power dissipation of 25W. The Rds(On) is specified at 105mOhm maximum at 4.5A and 10V gate drive. The device utilizes a DFN3030-8 package for surface mounting, offering excellent thermal performance. Key electrical parameters include a gate charge (Qg) of 11 nC at 10V and input capacitance (Ciss) of 612 pF at 50V. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for use in industrial power supplies, automotive electronics, and general-purpose switching circuits.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C4A (Tj)
Rds On (Max) @ Id, Vgs105mOhm @ 4.5A, 10V
FET Feature-
Power Dissipation (Max)25W
Vgs(th) (Max) @ Id2.6V @ 250µA
Supplier Device PackageDFN3030-8
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds612 pF @ 50 V

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