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MCBS260N10Y-TP

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MCBS260N10Y-TP

N-CHANNEL MOSFET,TO-263-7

Manufacturer: Micro Commercial Co

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Micro Commercial Co MCBS260N10Y-TP is an N-Channel Power MOSFET designed for high-power switching applications. It features a drain-to-source voltage (Vdss) of 100 V and a continuous drain current (Id) capability of 260 A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 1.8 mOhm maximum at 30 A and 10 V gate drive. With a maximum power dissipation of 375 W (Tj), this MOSFET is suitable for demanding power management tasks. Key parameters include a gate charge (Qg) of 161 nC at 10 V and an input capacitance (Ciss) of 10589 pF at 25 V. The MCBS260N10Y-TP is housed in a TO-263-7 (D2PAK) surface-mount package, facilitating efficient thermal management. Typical operating temperature range is -55°C to 175°C (Tj). This component is widely utilized in power supplies, motor control, and automotive electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C260A (Tc)
Rds On (Max) @ Id, Vgs1.8mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)375W (Tj)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263-7
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds10589 pF @ 25 V

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