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MCBS220N04Y-TP

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MCBS220N04Y-TP

N-CHANNEL MOSFET,TO-263-7

Manufacturer: Micro Commercial Co

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Micro Commercial Co MCBS220N04Y-TP is an N-Channel MOSFET designed for high-power switching applications. This component features a 40 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 220A at 25°C (Tc). With a maximum power dissipation of 188W (Tj) and a low on-resistance (Rds On) of 1.1mOhm at 20A and 10V, it is suitable for demanding power management tasks. Key parameters include a gate charge (Qg) of 132 nC at 10 V and input capacitance (Ciss) of 7967 pF at 25 V. The device operates across a temperature range of -55°C to 175°C (Tj) and is housed in a surface mount TO-263-7, D2PAK package. This MOSFET finds application in industrial automation, automotive power systems, and power supply designs.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C220A (Tc)
Rds On (Max) @ Id, Vgs1.1mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)188W (Tj)
Vgs(th) (Max) @ Id4.5V @ 250µA
Supplier Device PackageTO-263-7
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7967 pF @ 25 V

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