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MCB70N10Y-TP

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MCB70N10Y-TP

MOSFET N-CH 100V 70A D2PAK

Manufacturer: Micro Commercial Co

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Micro Commercial Co MCB70N10Y-TP is an N-Channel Power MOSFET designed for efficient switching applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 70A at 25°C (Tc), with a maximum power dissipation of 115W. The Rds(On) is rated at a maximum of 18mOhm at 12A and 10V, indicating low conduction losses. The device utilizes Metal Oxide technology and is housed in a surface mount D2PAK (TO-263-3) package, supplied on tape and reel. Key parameters include a Gate Charge (Qg) of 80 nC at 10V and Input Capacitance (Ciss) of 2960 pF at 50V. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for various industrial applications requiring high power handling and switching performance.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Rds On (Max) @ Id, Vgs18mOhm @ 12A, 10V
FET Feature-
Power Dissipation (Max)115W
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageD2PAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2960 pF @ 50 V

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