MCB160N10Y-TP
MOSFET N-CH D2-PAKManufacturer: Micro Commercial Co
Categories: Single FETs, MOSFETs
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Micro Commercial Co MCB160N10Y-TP is an N-Channel Power MOSFET designed for high-current applications. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 160A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 4mOhm at 30A and 10V, contributing to efficient power delivery. With a maximum power dissipation of 223W and a junction temperature range of -55°C to 150°C, it is suitable for demanding thermal environments. The MCB160N10Y-TP is packaged in a TO-263-3, D2PAK (TO-263AB) surface-mount configuration, commonly utilized in power supply, automotive, and industrial control systems. Drive voltage requirements are between 4.5V and 10V, with a gate charge of 105nC at 10V and input capacitance of 4803pF at 50V. It is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 223W |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4803 pF @ 50 V |
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