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MCB130N10Y-TP

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MCB130N10Y-TP

MOSFET N-CH 100V 130A D2PAK

Manufacturer: Micro Commercial Co

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Micro Commercial Co MCB130N10Y-TP is an N-Channel Power MOSFET designed for high-current applications. This component features a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 130A at 25°C, with a maximum power dissipation of 192W. The device exhibits a low on-resistance (Rds On) of 4.6mOhm at 60A and 10V, facilitated by a gate drive voltage of 10V. Key parameters include a gate charge (Qg) of 101.6 nC at 10V and an input capacitance (Ciss) of 6124.6 pF at 50V. It is housed in a D2PAK (TO-263-3, D2PAK) surface mount package, suitable for automated assembly and offering efficient thermal management. The operating temperature range is -55°C to 150°C. This MOSFET is typically utilized in power supply units, motor control, and electric vehicle charging systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C130A (Tc)
Rds On (Max) @ Id, Vgs4.6mOhm @ 60A, 10V
FET Feature-
Power Dissipation (Max)192W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageD2PAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs101.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6124.6 pF @ 50 V

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