MCAC80N10YA-TP
MOSFET N-CH DFN5060Manufacturer: Micro Commercial Co
Categories: Single FETs, MOSFETs
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The Micro Commercial Co MCAC80N10YA-TP is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a drain-to-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 80 A at 25°C. With a low on-resistance (Rds On) of 5.1 mOhm at 20 A and 10 V, it minimizes conduction losses. The device supports gate drive voltages from 6 V to 10 V, with a maximum gate-source voltage (Vgs) of ±20 V and a threshold voltage (Vgs(th)) of 4 V at 250 µA. Its input capacitance (Ciss) is rated at 3987 pF at 50 V, and gate charge (Qg) is 71 nC at 10 V. The MCAC80N10YA-TP has a maximum power dissipation of 35 W and operates across an industrial temperature range of -55°C to 150°C. Packaged in an 8-PowerTDFN (DFN5060) for surface mounting and supplied on tape and reel, this MOSFET is suitable for use in power supplies, motor control, and automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A |
| Rds On (Max) @ Id, Vgs | 5.1mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DFN5060 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 71 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3987 pF @ 50 V |
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