Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

MCAC60N150Y-TP

Banner
productimage

MCAC60N150Y-TP

MCAC60N150Y-TP

Manufacturer: Micro Commercial Co

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Micro Commercial Co MCAC60N150Y-TP is an N-Channel MOSFET offering a drain-source voltage (Vdss) of 150 V and a continuous drain current (Id) of 60 A at 25°C (Tc). This device features a maximum on-resistance (Rds On) of 19 mOhm at 20 A and 10 V. With a power dissipation of 125 W, it is suitable for demanding applications. The gate charge (Qg) is 27 nC at 10 V, and input capacitance (Ciss) is 2275 pF at 75 V. The nominal gate-source threshold voltage (Vgs(th)) is 4 V at 250 µA, with a maximum gate-source voltage (Vgs) of ±20 V. This component is housed in a surface mount 8-PowerTDFN (DFN5060) package and operates within a temperature range of -55°C to 150°C (TJ). It finds application in power management systems and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Rds On (Max) @ Id, Vgs19mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)125W
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageDFN5060
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)150 V
Gate Charge (Qg) (Max) @ Vgs27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2275 pF @ 75 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
MCQ4459-TP

MOSFET P-CH 30V 6.5A 8SOP

product image
MCPF18N20-BP

MOSFET N-CHANNEL MOSFET

product image
SI5618A-TP

Interface