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MCAC50N03Y-TP

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MCAC50N03Y-TP

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Manufacturer: Micro Commercial Co

Categories: Single FETs, MOSFETs

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Micro Commercial Co MCAC50N03Y-TP is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 50A at 25°C (Tc). With a maximum Power Dissipation (Pd) of 38W (Tc), it is suitable for demanding thermal environments. The Rds(On) is specified at a maximum of 5.6mOhm at 25A and 10V, with a Gate-Source Voltage (Vgs) drive range from 4.5V to 10V. Key capacitances include Input Capacitance (Ciss) of 2989pF at 15V and Gate Charge (Qg) of 26nC at 4.5V. The MOSFET operates within a temperature range of -55°C to 175°C (TJ). It is housed in an 8-PowerTDFN (DFN5060) surface mount package, facilitating compact PCB layouts. This device finds application in power management, automotive, and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Rds On (Max) @ Id, Vgs5.6mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)38W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageDFN5060
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2989 pF @ 15 V

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