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MCAC45N10Y-TP

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MCAC45N10Y-TP

MOSFET N-CH 100V 45A DFN5060

Manufacturer: Micro Commercial Co

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Micro Commercial Co's MCAC45N10Y-TP is an N-Channel power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 45A at 25°C. The Rds On is specified at a maximum of 8.5mOhm at 25A, 10V, facilitated by a gate drive voltage range of 4.5V to 10V. Key electrical characteristics include a gate charge (Qg) of 45nC at 10V and input capacitance (Ciss) of 2240pF at 50V. Operating across an extended temperature range of -55°C to 150°C (TJ), this MOSFET supports a maximum power dissipation of 75W. The MCAC45N10Y-TP is packaged in an 8-PowerTDFN (DFN5060) for surface mounting and is supplied on tape and reel. This device is suitable for use in power management and switching applications within industries such as automotive and industrial electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C45A (Tj)
Rds On (Max) @ Id, Vgs8.5mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)75W
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageDFN5060
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2240 pF @ 50 V

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