SICPT5060Y-BP
SCHOTTKY DIODESManufacturer: Micro Commercial Co
Categories: Single Diodes
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Micro Commercial Co SICPT5060Y-BP is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. This through-hole component, housed in a TO-247AD package, offers a maximum DC reverse voltage (Vr) of 650 V and a significant average rectified current (Io) of 119A. The forward voltage drop (Vf) is rated at 1.6 V at 50 A, with a low reverse leakage current of 25 µA at 650 V. Featuring a reverse recovery time of 0 ns, this diode is suitable for demanding power conversion systems. The operating junction temperature range is -55°C to 175°C. This component finds utility in electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 2453pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 119A |
| Supplier Device Package | TO-247AD |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Grade | - |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 50 A |
| Current - Reverse Leakage @ Vr | 25 µA @ 650 V |
| Qualification | - |
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