SICPT30120YA-BP
SCHOTTKY DIODESManufacturer: Micro Commercial Co
Categories: Single Diodes
Quality Control: Learn More
Micro Commercial Co SICPT30120YA-BP is a Silicon Carbide (SiC) Schottky diode designed for high-power applications. This through-hole component, housed in a TO-247AD package, offers a reverse voltage rating of 1200 V and a continuous average rectified current capability of 30 A. The forward voltage drop at 30 A is 1.58 V. Featuring a low reverse leakage current of 30 µA at 1200 V and a zero reverse recovery time, this diode is optimized for high-frequency switching and efficient power conversion. Its operating junction temperature range is -55°C to 175°C. The device is supplied on a tape and reel. This component is suitable for use in power supplies, electric vehicle charging, industrial motor drives, and solar inverters.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 2179pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 30A |
| Supplier Device Package | TO-247AD |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Grade | - |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.58 V @ 30 A |
| Current - Reverse Leakage @ Vr | 30 µA @ 1200 V |
| Qualification | - |
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