SICPT30120-BP
InterfaceManufacturer: Micro Commercial Co
Categories: Single Diodes
Quality Control: Learn More
Micro Commercial Co SICPT30120-BP is a Silicon Carbide (SiC) Schottky diode designed for high-voltage, high-current applications. This through-hole component, packaged in a TO-247-2 (TO-247AD) case, offers a maximum DC reverse voltage of 1200 V and an average rectified forward current of 30 A. Its forward voltage drop at the rated current is a maximum of 1.7 V.
Key performance characteristics include a low reverse leakage current of 60 µA at 1200 V and a capacitance of 2259 pF at 0 V and 1 MHz. Notably, the SICPT30120-BP exhibits no reverse recovery time for currents exceeding 500 mA (Io), indicating excellent switching performance. The operating junction temperature range is -55°C to 175°C. This diode is suitable for power factor correction, inverters, and power supplies across various industrial and automotive sectors. The device is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 2259pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 30A |
| Supplier Device Package | TO-247AD |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 30 A |
| Current - Reverse Leakage @ Vr | 60 µA @ 1200 V |
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