SICPT10120Y-BP
SCHOTTKY DIODESManufacturer: Micro Commercial Co
Categories: Single Diodes
Quality Control: Learn More
Micro Commercial Co SICPT10120Y-BP is a Silicon Carbide (SiC) Schottky diode designed for high-voltage applications. This through-hole component, housed in a TO-247AD package, offers a maximum DC reverse voltage of 1200 V and an average rectified forward current of 10 A. The forward voltage drop (Vf) is specified at 1.54 V at 10 A, with a low reverse leakage current of 13 µA at 1200 V. The diode exhibits a capacitance of 700pF at 0V and 1MHz, and a notable reverse recovery time characteristic of SiC technology, indicating no significant recovery time above 500mA. Operating across a junction temperature range of -55°C to 175°C, this device is suitable for use in power supply, motor drive, and solar inverter applications where high efficiency and robust performance are critical. The part is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 700pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-247AD |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Grade | - |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.54 V @ 10 A |
| Current - Reverse Leakage @ Vr | 13 µA @ 1200 V |
| Qualification | - |
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