SICF10120Y-BP
SCHOTTKY DIODESManufacturer: Micro Commercial Co
Categories: Single Diodes
Quality Control: Learn More
Micro Commercial Co SICF10120Y-BP is a 1200V, 10A Silicon Carbide (SiC) Schottky diode. This through-hole component, packaged in an ITO-220AC, features a low forward voltage drop of 1.54V at 10A and a reverse leakage of 13 µA at 1200V. The device exhibits a capacitance of 700pF at 0V and 1MHz, with a stated "no recovery time" for currents greater than 500mA. Operating across a wide junction temperature range of -55°C to 175°C, this diode is suitable for high-voltage power applications in industries such as electric vehicle charging, industrial power supplies, and renewable energy systems. The SICF10120Y-BP is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-220-2 Isolated Tab |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 700pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | ITO-220AC |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Grade | - |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.54 V @ 10 A |
| Current - Reverse Leakage @ Vr | 13 µA @ 1200 V |
| Qualification | - |
Request a Quote
Clients Also Buy
ER3GHE3-TP
Interface
HER154-AP
DIODE GEN PURP 300V 1.5A DO15
ER1D-LTP
DIODE GEN PURP 200V 1A DO214AA
