SICB5060XY-TP
SCHOTTKY DIODESManufacturer: Micro Commercial Co
Categories: Single Diodes
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Micro Commercial Co. SICB5060XY-TP is a Silicon Carbide Schottky diode designed for high-efficiency power applications. This surface mount component, packaged in a D2PAK (TO-263-3, D2PAK (2 Leads + Tab), TO-263AB), offers a maximum DC reverse voltage of 650 V and a substantial average rectified forward current of 108 A. It features a low forward voltage drop of 1.6 V at 50 A and exhibits minimal reverse leakage, specified at 25 µA at 650 V. The diode's fast switching characteristics are indicated by its "No Recovery Time > 500mA (Io)" rating, making it suitable for demanding power conversion circuits. Operating across a junction temperature range of -55°C to 175°C, this component is commonly utilized in power supplies, electric vehicle charging, industrial motor drives, and renewable energy systems. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 2453pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 108A |
| Supplier Device Package | D2PAK |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Grade | - |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 50 A |
| Current - Reverse Leakage @ Vr | 25 µA @ 650 V |
| Qualification | - |
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