SICB10120YA-TP
SCHOTTKY DIODESManufacturer: Micro Commercial Co
Categories: Single Diodes
Quality Control: Learn More
This Micro Commercial Co SICB10120YA-TP is a Silicon Carbide (SiC) Schottky diode designed for high-voltage applications. It features a 1200 V DC reverse voltage rating and a 10 A average rectified forward current capability. The forward voltage drop at its rated current is a maximum of 1.54 V. This component exhibits a low reverse leakage current of 13 µA at 1200 V and possesses no measurable reverse recovery time for currents greater than 500 mA. With a capacitance of 700 pF at 0 V and 1 MHz, it is suitable for applications requiring fast switching. The device operates across a junction temperature range of -55°C to 175°C and is provided in a D2PAK (TO-263-3) surface mount package, supplied on tape and reel. This SiC diode is commonly utilized in power factor correction, solar inverters, and electric vehicle charging infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 700pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | D2PAK |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Grade | - |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.54 V @ 10 A |
| Current - Reverse Leakage @ Vr | 13 µA @ 1200 V |
| Qualification | - |
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