SICAC1060P-TP
InterfaceManufacturer: Micro Commercial Co
Categories: Single Diodes
Quality Control: Learn More
Micro Commercial Co SICAC1060P-TP is a 650V, 10A Silicon Carbide (SiC) Schottky diode designed for demanding applications. This surface mount component, housed in an 8-PowerTDFN (DFN5060) package, features a low forward voltage of 1.6V at 10A and a reverse leakage current of 44 µA at 650V. Its zero reverse recovery time contributes to high efficiency and reduced switching losses, making it suitable for power factor correction, inverters, and power supply circuits across industries such as renewable energy, electric vehicles, and industrial automation. The operating junction temperature range is -55°C to 175°C, and it has a capacitance of 452pF at 0V.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 452pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | DFN5060 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 10 A |
| Current - Reverse Leakage @ Vr | 44 µA @ 650 V |
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