SICAC0860P-TP
InterfaceManufacturer: Micro Commercial Co
Categories: Single Diodes
Quality Control: Learn More
Micro Commercial Co SICAC0860P-TP is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. This surface mount DFN5060 packaged component offers a maximum DC reverse voltage of 650 V and an average rectified forward current of 8 A. It features a low forward voltage drop of 1.6 V at 8 A and a minimal reverse leakage current of 36 µA at 650 V. The SICAC0860P-TP exhibits a remarkably fast switching speed, characterized by a reverse recovery time of 0 ns and no recovery time beyond 500mA (Io). Its operational junction temperature range is from -55°C to 175°C, making it suitable for demanding environments. This component finds application in power factor correction, solar inverters, electric vehicle chargers, and industrial power supplies.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 346pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | DFN5060 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 8 A |
| Current - Reverse Leakage @ Vr | 36 µA @ 650 V |
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