SIC20120PTP-BP
InterfaceManufacturer: Micro Commercial Co
Categories: Single Diodes
Quality Control: Learn More
Micro Commercial Co SIC20120PTP-BP is a Silicon Carbide (SiC) Schottky diode designed for high-voltage applications. This component offers a maximum DC reverse voltage of 1200 V and an average rectified current of 20 A. Featuring a low forward voltage drop of 1.8 V at 20 A and a minimal reverse leakage current of 60 µA at 1200 V, it demonstrates excellent efficiency. The device has a capacitance of 1190 pF at 0 V and 1 MHz. It is characterized by its extremely fast switching speed, with a reverse recovery time of 0 ns, indicating no recovery time above 500 mA. The operating junction temperature range is -55°C to 175°C. Supplied in a TO-247-2L package for through-hole mounting, this diode is suitable for power supply, motor drive, and industrial power conversion applications where high voltage and high efficiency are critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 1190pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 20A |
| Supplier Device Package | TO-247-2L |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 20 A |
| Current - Reverse Leakage @ Vr | 60 µA @ 1200 V |
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