SIC20120PTA-BP
DIODE SIL CARB 1.2KV 10A TO247-3Manufacturer: Micro Commercial Co
Categories: Single Diodes
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Micro Commercial Co SIC20120PTA-BP is a Silicon Carbide (SiC) Schottky diode designed for high-performance power applications. This through-hole component offers a maximum reverse voltage of 1200 V and an average rectified forward current of 10 A. It features a low forward voltage drop of 1.8 V at 10 A and a minimal reverse leakage current of 2 µA at 1200 V. The diode exhibits no significant reverse recovery time above 500mA, making it suitable for high-frequency switching. Packaged in a TO-247-3, this device operates within a junction temperature range of -55°C to 175°C. Industries utilizing this component include electric vehicle charging, industrial power supplies, and solar inverters, where its SiC technology provides superior efficiency and thermal performance.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 750pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-247-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A |
| Current - Reverse Leakage @ Vr | 2 µA @ 1200 V |
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