SIC20120B-BP
InterfaceManufacturer: Micro Commercial Co
Categories: Single Diodes
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Micro Commercial Co SIC20120B-BP is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. This through-hole component, housed in a TO-220AC package, offers a maximum DC reverse voltage of 1200 V and a significant average rectified current handling capability of 20A. Its forward voltage drop is rated at 1.8 V at 20 A, with a minimal reverse leakage current of 50 µA at 1200 V. Notably, this diode exhibits no recovery time greater than 500mA (Io), indicating excellent switching characteristics. The operating junction temperature range is -55°C to 175°C. This component is suitable for power supply, motor control, and renewable energy systems, where efficient rectification and high voltage blocking are critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 20A |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 20 A |
| Current - Reverse Leakage @ Vr | 50 µA @ 1200 V |