RA257-BP
DIODE GEN PURP 1KV 25A RAManufacturer: Micro Commercial Co
Categories: Single Diodes
Quality Control: Learn More
Micro Commercial Co RA257-BP is a general-purpose diode designed for high-voltage and high-current applications. This surface mount component features a maximum DC reverse voltage (Vr) of 1000 V and an average rectified forward current (Io) of 25 A. The forward voltage drop (Vf) is 1.1 V at 25 A, and the reverse leakage current (Ir) is a low 5 µA at 1000 V. With a typical reverse recovery time (trr) of 3 µs, this diode is suitable for standard recovery applications. Its capacitance is rated at 300 pF at 4V and 1MHz. Operating temperature ranges from -50°C to 150°C. The RA package is ideal for demanding power supply, industrial control, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | RA |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 3 µs |
| Technology | Standard |
| Capacitance @ Vr, F | 300pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 25A |
| Supplier Device Package | RA |
| Operating Temperature - Junction | -50°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 25 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 1000 V |
Request a Quote
Clients Also Buy
ER3GHE3-TP
Interface
HER154-AP
DIODE GEN PURP 300V 1.5A DO15
ER1D-LTP
DIODE GEN PURP 200V 1A DO214AA
