TPT5609-C-AP
TRANS NPN 20V 1A TO92Manufacturer: Micro Commercial Co
Categories: Single Bipolar Transistors
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The Micro Commercial Co TPT5609-C-AP is a bipolar junction transistor (BJT) featuring an NPN configuration. This component offers a collector-emitter breakdown voltage of 20V and a maximum continuous collector current of 1A, with a saturation voltage of 500mV at 80mA/800mA. It exhibits a transition frequency of 190MHz and a power dissipation of 750mW. The DC current gain (hFE) is a minimum of 120 at 500mA collector current and 2V collector-emitter voltage. Designed for through-hole mounting, the TPT5609-C-AP is housed in a TO-92 package and is supplied in Tape & Box (TB) packaging. Its operational temperature range extends from -55°C to 150°C. This transistor is suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 80mA, 800mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 2V |
| Frequency - Transition | 190MHz |
| Supplier Device Package | TO-92 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 750 mW |
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