TPT5609-B-AP
TRANS NPN 20V 1A TO92Manufacturer: Micro Commercial Co
Categories: Single Bipolar Transistors
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Micro Commercial Co TPT5609-B-AP is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a maximum collector-emitter breakdown voltage of 20V and a continuous collector current capability of 1A. The TPT5609-B-AP offers a transition frequency of 190MHz and a maximum power dissipation of 750mW. It is housed in a standard TO-92 package (TO-226-3, TO-92-3) with formed leads, suitable for through-hole mounting. The device exhibits a minimum DC current gain (hFE) of 85 at 500mA collector current and 2V collector-emitter voltage, with a collector cutoff current of 1µA (ICBO). Typical saturation voltage (Vce(sat)) is 500mV at 80mA base current and 800mA collector current. Operating temperature range is -55°C to 150°C. This transistor is commonly utilized in consumer electronics, industrial control systems, and power management circuits. The component is supplied in Tape & Box (TB) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 80mA, 800mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 85 @ 500mA, 2V |
| Frequency - Transition | 190MHz |
| Supplier Device Package | TO-92 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 750 mW |
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