TPT5609-A-AP
TRANS NPN 20V 1A TO92Manufacturer: Micro Commercial Co
Categories: Single Bipolar Transistors
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The Micro Commercial Co TPT5609-A-AP is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a maximum collector current (Ic) of 1A and a collector-emitter breakdown voltage (Vce) of 20V. With a transition frequency (fT) of 190MHz, it is suitable for operation in various electronic systems. The device offers a minimum DC current gain (hFE) of 60 at 500mA and 2V. Its maximum power dissipation is rated at 750mW. The TPT5609-A-AP is packaged in a TO-92 (TO-226-3, TO-92-3) through-hole package, supplied in Tape & Box (TB). This transistor is commonly employed in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 80mA, 800mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 500mA, 2V |
| Frequency - Transition | 190MHz |
| Supplier Device Package | TO-92 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 750 mW |
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