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S9018-I-AP

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S9018-I-AP

TRANS NPN 18V 0.05A TO92

Manufacturer: Micro Commercial Co

Categories: Single Bipolar Transistors

Quality Control: Learn More

Micro Commercial Co S9018-I-AP is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage (Vce) of 18V and a maximum continuous collector current (Ic) of 50mA. It exhibits a transition frequency (fT) of 600MHz, making it suitable for moderate frequency circuitry. The device is rated for a maximum power dissipation of 310mW and has a DC current gain (hFE) of at least 130 at 1mA collector current and 5V collector-emitter voltage. Saturation voltage (Vce(sat)) is a maximum of 500mV at 1mA base current and 10mA collector current. The S9018-I-AP is packaged in a TO-92 (TO-226-3) through-hole package and is supplied in Tape & Box (TB) packaging. Its operating temperature range is -55°C to 150°C. This component finds application in various electronic equipment, including consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: ObsoletePackaging: Tape & Box (TB)
Technical Details:
PackagingTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 1mA, 10mA
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce130 @ 1mA, 5V
Frequency - Transition600MHz
Supplier Device PackageTO-92
Current - Collector (Ic) (Max)50 mA
Voltage - Collector Emitter Breakdown (Max)18 V
Power - Max310 mW

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