S9018-G-AP
TRANS NPN 18V 0.05A TO92Manufacturer: Micro Commercial Co
Categories: Single Bipolar Transistors
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Micro Commercial Co S9018-G-AP is an NPN bipolar junction transistor (BJT) designed for through-hole mounting in a TO-92 package. This component offers a collector-emitter breakdown voltage of 18V and a maximum continuous collector current of 50mA. It features a transition frequency of 600MHz and a maximum power dissipation of 310mW. Key electrical characteristics include a minimum DC current gain (hFE) of 70 at 1mA collector current and 5V collector-emitter voltage, and a Vce(sat) of 500mV at 1mA base current and 10mA collector current. The device operates across a temperature range of -55°C to 150°C. This transistor is typically utilized in general-purpose amplification and switching applications within consumer electronics and industrial automation. The S9018-G-AP is supplied in Tape & Box packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 1mA, 5V |
| Frequency - Transition | 600MHz |
| Supplier Device Package | TO-92 |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 18 V |
| Power - Max | 310 mW |
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