S9013-I-AP
TRANS NPN 25V 0.5A TO92Manufacturer: Micro Commercial Co
Categories: Single Bipolar Transistors
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Micro Commercial Co S9013-I-AP is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 25V and a continuous collector current capability of 500mA. The device offers a transition frequency of 150MHz and a maximum power dissipation of 625mW. It is supplied in a TO-92 package, suitable for through-hole mounting. The S9013-I-AP exhibits a minimum DC current gain (hFE) of 190 at 50mA collector current and 1V collector-emitter voltage. Its operating temperature range is -55°C to 150°C. This transistor is commonly utilized in consumer electronics, industrial control systems, and telecommunications equipment. The component is provided in Tape & Box packaging.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 190 @ 50mA, 1V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | TO-92 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 625 mW |
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