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D965-T-AP

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D965-T-AP

TRANS NPN 22V 5A TO92

Manufacturer: Micro Commercial Co

Categories: Single Bipolar Transistors

Quality Control: Learn More

The Micro Commercial Co D965-T-AP is an NPN bipolar junction transistor (BJT) designed for through-hole mounting. This component features a collector-emitter breakdown voltage of 22 V and a maximum collector current of 5 A. With a power dissipation of 750 mW and a minimum DC current gain (hFE) of 560 at 500mA and 2V, it is suitable for various power switching and amplification applications. The transistor operates within a temperature range of -55°C to 150°C and is housed in a TO-92 package. The Vce saturation is specified at a maximum of 350mV at 100mA and 3A. This device is commonly utilized in industrial automation, consumer electronics, and power management systems. The D965-T-AP is supplied in Tape & Box packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)
Technical Details:
PackagingTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic350mV @ 100mA, 3A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce560 @ 500mA, 2V
Frequency - Transition-
Supplier Device PackageTO-92
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)22 V
Power - Max750 mW

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