D965-T-AP
TRANS NPN 22V 5A TO92Manufacturer: Micro Commercial Co
Categories: Single Bipolar Transistors
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The Micro Commercial Co D965-T-AP is an NPN bipolar junction transistor (BJT) designed for through-hole mounting. This component features a collector-emitter breakdown voltage of 22 V and a maximum collector current of 5 A. With a power dissipation of 750 mW and a minimum DC current gain (hFE) of 560 at 500mA and 2V, it is suitable for various power switching and amplification applications. The transistor operates within a temperature range of -55°C to 150°C and is housed in a TO-92 package. The Vce saturation is specified at a maximum of 350mV at 100mA and 3A. This device is commonly utilized in industrial automation, consumer electronics, and power management systems. The D965-T-AP is supplied in Tape & Box packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 100mA, 3A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 560 @ 500mA, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 22 V |
| Power - Max | 750 mW |
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