Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Single Bipolar Transistors

D965-R-AP

Banner
productimage

D965-R-AP

TRANS NPN 22V 5A TO92

Manufacturer: Micro Commercial Co

Categories: Single Bipolar Transistors

Quality Control: Learn More

Micro Commercial Co's D965-R-AP is an NPN bipolar junction transistor (BJT) designed for through-hole mounting in a TO-92 package. This component offers a collector-emitter breakdown voltage of 22V and a continuous collector current capability of up to 5A. Key electrical specifications include a maximum power dissipation of 750mW and a saturation voltage (Vce(sat)) of 350mV at 100mA collector current and 3A collector current. The device exhibits a minimum DC current gain (hFE) of 340 when operated at 500mA collector current and 2V collector-emitter voltage. The collector cutoff current (ICBO) is specified at a maximum of 100nA. This transistor is suitable for applications in general-purpose switching and amplification circuits. The D965-R-AP is supplied in Tape & Box packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)
Technical Details:
PackagingTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic350mV @ 100mA, 3A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce340 @ 500mA, 2V
Frequency - Transition-
Supplier Device PackageTO-92
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)22 V
Power - Max750 mW

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
KTA1270-Y-AP

TRANS PNP 30V 0.5A TO92

product image
MMS9015-L-TP

Interface

product image
2SA684-AP

TRANS PNP 50V 1A TO92L