8050SS-D-AP
TRANS NPN 25V 1.5A TO92Manufacturer: Micro Commercial Co
Categories: Single Bipolar Transistors
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Micro Commercial Co NPN Bipolar Junction Transistor, part number 8050SS-D-AP, offers a 25V collector-emitter breakdown voltage and a continuous collector current of 1.5A. This device features a maximum power dissipation of 1W and a transition frequency of 100MHz. The minimum DC current gain (hFE) is specified at 160 for an operating point of 100mA collector current and 1V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 500mV at 80mA base current and 800mA collector current. The transistor is housed in a TO-92 package with formed leads, suitable for through-hole mounting. The operating temperature range is -55°C to 150°C. This component is utilized in various industrial applications including power supply regulation and general-purpose amplification. The packaging is Tape & Box.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 80mA, 800mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 100mA, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92 |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 1 W |
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