2SA562-O-AP
TRANS PNP 30V 0.5A TO92Manufacturer: Micro Commercial Co
Categories: Single Bipolar Transistors
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Micro Commercial Co presents the 2SA562-O-AP, a PNP Bipolar Junction Transistor (BJT) housed in a TO-92 package. This component offers a collector-emitter breakdown voltage of 30V and a continuous collector current capability of up to 500mA. It features a transition frequency of 200MHz and a maximum power dissipation of 500mW, with a junction temperature rating of 150°C. The 2SA562-O-AP exhibits a minimum DC current gain (hFE) of 70 at 100mA and 1V, and a collector-emitter saturation voltage of 250mV at 10mA and 100mA. This through-hole device, supplied in Tape & Box packaging, is suitable for applications in consumer electronics and general-purpose amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 100mA, 1V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TO-92 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 500 mW |
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