2N3906-AP
TRANS PNP 40V 0.2A TO92Manufacturer: Micro Commercial Co
Categories: Single Bipolar Transistors
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Micro Commercial Co 2N3906-AP is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a 40V collector-emitter breakdown voltage and a maximum collector current of 200mA. With a transition frequency of 250MHz and a minimum DC current gain (hFE) of 100 at 10mA and 1V, it offers robust performance for demanding circuits. The device is rated for a maximum power dissipation of 600mW and operates across a temperature range of -55°C to 150°C. Supplied in a TO-92 package, it utilizes through-hole mounting for board integration. This transistor is commonly found in consumer electronics, industrial automation, and telecommunications equipment. The 2N3906-AP is delivered in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | TO-92 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 600 mW |
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