SI3134KDW-TP
MOSFET 2N-CH 20V 0.75A SOT363Manufacturer: Micro Commercial Co
Categories: FET, MOSFET Arrays
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The Micro Commercial Co SI3134KDW-TP is a high-performance MOSFET array featuring two independent N-channel enhancement mode transistors within a compact SOT-363 package. This component offers a drain-source breakdown voltage of 20V and supports a continuous drain current of up to 750mA at 25°C. With a low on-resistance (Rds On) of 380mOhm at 650mA and 4.5V Vgs, it minimizes conduction losses. The device exhibits a gate charge (Qg) of 20nC maximum and an input capacitance (Ciss) of 120pF maximum at 16V. Designed for surface mounting, it operates reliably across a wide temperature range up to 150°C. The SI3134KDW-TP is suitable for applications in portable electronics, power management, and general-purpose switching. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 150mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 750mA |
| Input Capacitance (Ciss) (Max) @ Vds | 120pF @ 16V |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 650mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Supplier Device Package | SOT-363 |