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RF3356-TP

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RF3356-TP

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Manufacturer: Micro Commercial Co

Categories: Bipolar RF Transistors

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Micro Commercial Co RF3356-TP is an NPN bipolar RF transistor designed for high-frequency applications. This surface mount device, packaged in a SOT-23, operates with a collector-emitter breakdown voltage of 12V and a maximum collector current of 100mA. It exhibits a minimum DC current gain (hFE) of 130 at 20mA and 10V. With a transition frequency of 7GHz and a typical noise figure of 1.1dB at 1GHz, this component delivers a gain of 12.5dB. Its power dissipation is rated at 150mW, and it is suitable for operation across a temperature range of -55°C to 150°C. This transistor is commonly utilized in wireless infrastructure, mobile devices, and general-purpose RF amplification.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Gain12.5dB
Power - Max150mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)12V
DC Current Gain (hFE) (Min) @ Ic, Vce130 @ 20mA, 10V
Frequency - Transition7GHz
Noise Figure (dB Typ @ f)1.1dB @ 1GHz
Supplier Device PackageSOT-23

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