XR46000ESETR
MOSFET N-CH 600V 1.5A SOT223Manufacturer: MaxLinear, Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The MaxLinear, Inc. XR46000ESETR is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 1.5A at 25°C (Tc), with a maximum power dissipation of 20W (Tc). The XR46000ESETR offers a low Rds On of 8 Ohm at 750mA and 10V, complemented by a gate charge (Qg) of 7.5 nC at 10V. Its input capacitance (Ciss) is rated at 170 pF at 25V. The device is housed in a SOT-223-3 package, suitable for surface mounting. This MOSFET is utilized across various industries including industrial power supplies and consumer electronics.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 750mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-223-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 25 V |
Request a Quote
Clients Also Buy
XR46000ESE
MOSFET N-CH 600V 1.5A SOT223
XR78021ELTR-F
IC GATE DVR DRMOS 20A QFN
XR78021EL-F
IC GATE DVR DRMOS 20A
