XR46000ESE
MOSFET N-CH 600V 1.5A SOT223Manufacturer: MaxLinear, Inc.
Categories: Single FETs, MOSFETs
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MaxLinear, Inc. XR46000ESE is a 600V N-Channel MOSFET designed for surface mounting in a SOT-223-3 package. This device offers a continuous drain current capability of 1.5A at 25°C with a maximum power dissipation of 20W. Key electrical characteristics include a Vgs(th) of 4V (max) at 250µA, a gate charge (Qg) of 7.5nC at 10V, and input capacitance (Ciss) of 170pF at 25V. The Rds(on) is specified at 8 Ohms maximum at 750mA and 10V. Operating at temperatures up to 150°C (TJ), this MOSFET is suitable for applications in power supply units and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 750mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-223-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 25 V |
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