WSGPA01-V1-R1
RF MOSFET GAN 48V 12DFNManufacturer: MACOM Technology Solutions
Categories: RF FETs, MOSFETs
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MACOM Technology Solutions WSGPA01-V1-R1 is a Gallium Nitride (GaN) RF Power MOSFET designed for high-frequency applications. This surface mount component operates at 48V test voltage and delivers 10W of output power at 5GHz. It features a gain of 16.3dB and a current rating of 25mA at its test conditions. The WSGPA01-V1-R1 is housed in a 12-DFN (3x4) package with an exposed pad, facilitating efficient thermal management. Its robust GaN technology makes it suitable for demanding applications in the aerospace, defense, and high-frequency communication industries. The component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 26 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 12-VFDFN Exposed Pad |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 5GHz |
| Configuration | - |
| Power - Output | 10W |
| Gain | 16.3dB |
| Technology | GaN |
| Noise Figure | - |
| Supplier Device Package | 12-DFN (3x4) |
| Voltage - Rated | 125 V |
| Voltage - Test | 48 V |
| Current - Test | 25 mA |