WS1A3940-V1-R3K
RF MOSFET GAN 48V 20LGAManufacturer: MACOM Technology Solutions
Categories: RF FETs, MOSFETs
Quality Control: Learn More
MACOM Technology Solutions WS1A3940-V1-R3K is a Gallium Nitride (GaN) RF MOSFET designed for high-performance applications. This component operates within the 3.7GHz to 3.98GHz frequency range, delivering 10W of output power with a typical gain of 11.7dB at a drain voltage of 48V and a drain current of 45mA. The device is housed in a 20-LGA (6x6) package with an exposed pad, suitable for surface mounting. Its robust GaN technology enables efficient operation in demanding RF power amplification circuits. This RF MOSFET is broadly utilized in critical sectors such as aerospace and defense, telecommunications infrastructure, and satellite communications systems where reliability and performance are paramount. The component is supplied on a Tape & Reel (TR) for automated assembly processes.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 20-TFLGA Exposed Pad |
| Current Rating (Amps) | - |
| Mounting Type | Surface Mount |
| Frequency | 3.7GHz ~ 3.98GHz |
| Configuration | - |
| Power - Output | 10W |
| Gain | 11.7dB |
| Technology | GaN |
| Noise Figure | - |
| Supplier Device Package | 20-LGA (6x6) |
| Voltage - Rated | 125 V |
| Voltage - Test | 48 V |
| Current - Test | 45 mA |
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