UF28100M
RF MOSFET N-CHANNEL 28VManufacturer: MACOM Technology Solutions
Categories: RF FETs, MOSFETs
Quality Control: Learn More
MACOM Technology Solutions UF28100M is an N-channel RF power MOSFET designed for high-frequency applications. This component operates within a frequency range of 100MHz to 500MHz, delivering a nominal gain of 10dB and an output power of 100W. It is rated for a drain-source voltage of 65V, with a test voltage of 28V. The UF28100M supports a continuous drain current of 600mA, with a specified gate-source leakage of 3mA. Engineered for robust performance, this device is suitable for demanding applications in wireless infrastructure, radar systems, and industrial RF heating. The UF28100M is supplied in a 4-lead flanged package for chassis mounting, provided in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4L-FLG |
| Current Rating (Amps) | 3mA |
| Mounting Type | Chassis Mount |
| Frequency | 100MHz ~ 500MHz |
| Configuration | N-Channel |
| Power - Output | 100W |
| Gain | 10dB |
| Technology | MOSFET (Metal Oxide) |
| Noise Figure | - |
| Supplier Device Package | - |
| Voltage - Rated | 65 V |
| Voltage - Test | 28 V |
| Current - Test | 600 mA |
Request a Quote
Clients Also Buy
MRF136Y
RF MOSFET 28V 319B-02
PTFB182557SH-V1-R250
RF MOSFET LDMOS
NPT2010
RF MOSFET HEMT 48V
