PTVA035002EV-V1-R0
RF MOSFET LDMOS 50V H-36275-4Manufacturer: MACOM Technology Solutions
Categories: RF FETs, MOSFETs
Quality Control: Learn More
MACOM Technology Solutions PTVA035002EV-V1-R0 is an RF LDMOS power transistor designed for high-power applications. This component operates within the 390MHz to 450MHz frequency range, delivering a significant 500W output power. It features a typical gain of 18dB and is rated for a drain-source voltage of 50V during testing, with a maximum breakdown voltage of 105V. The device is specified for a continuous drain current of 500mA at a test voltage of 50V. Supplied in a Strip package with a H-36275-4 case, this transistor is suitable for chassis mounting. Its robust performance characteristics make it a key component in demanding RF power amplifier designs, commonly found in telecommunications infrastructure and radar systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: StripDownload Free CAD Model:
Technical Details:
| Packaging | Strip |
| Package / Case | H-36275-4 |
| Current Rating (Amps) | - |
| Mounting Type | Chassis Mount |
| Frequency | 390MHz ~ 450MHz |
| Power - Output | 500W |
| Gain | 18dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | H-36275-4 |
| Voltage - Rated | 105 V |
| Voltage - Test | 50 V |
| Current - Test | 500 mA |
Request a Quote
Clients Also Buy
MRF136Y
RF MOSFET 28V 319B-02
PTFB182557SH-V1-R250
RF MOSFET LDMOS
NPT2010
RF MOSFET HEMT 48V
