PTRA087008NB-V1-R2
RF MOSFET LDMOS 48V 6HB2SOFManufacturer: MACOM Technology Solutions
Categories: RF FETs, MOSFETs
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MACOM Technology Solutions PTRA087008NB-V1-R2 is an RF LDMOS power transistor designed for high-power applications. This device operates within the 755MHz to 805MHz frequency range, delivering a nominal output power of 650W with a typical small-signal gain of 18.5dB. The transistor is rated for a drain-source voltage of 48V under test conditions, with a maximum breakdown voltage of 105V. Its dual-channel configuration and 510mA test current are optimized for efficient power amplification. The PTRA087008NB-V1-R2 is supplied in a PG-HB2SOF-6-1 package suitable for surface mounting and is delivered on tape and reel. This component finds application in base station infrastructure and other high-frequency power amplifier systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | HB2SOF-6-1 |
| Current Rating (Amps) | 10µA |
| Mounting Type | Surface Mount |
| Frequency | 755MHz ~ 805MHz |
| Configuration | Dual |
| Power - Output | 650W |
| Gain | 18.5dB |
| Technology | LDMOS |
| Noise Figure | - |
| Supplier Device Package | PG-HB2SOF-6-1 |
| Voltage - Rated | 105 V |
| Voltage - Test | 48 V |
| Current - Test | 510 mA |
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